Senior Power Semiconductor Design Engineer - MOSFET / IGBT

Job Title: Senior Power Semiconductor Design Engineer - MOSFET / IGBT
Job Location: Sunnyvale, CA (will help with relocation)
Compensation: $130K - $160K base plus bonus and RSUs
Requirements: Power MOSFET Design, IGBT Design, Power Semiconductor Devices, TCAD Simulation, Device Characterization, Trench MOSFET / Trench DMOS, VDMOS Development

Position Overview

The Senior Design Engineer will be responsible for MOSFET/IGBT design and contribute to our collaborative and innovative team. In this role, you will work closely with the marketing, packaging, product engineering, and integration groups to design, develop, and launch new products and next-generation platforms.

Key Responsibilities

• Power device structure and process simulation with TCAD tools including Tsuprem4, Medici, and Sentaurus
• Device characterization with LCR meter, curve tracer, FET test, etc.
• Layout design for power devices with L-edit or Cadence.
• Work closely with the marketing, packaging, product engineering, and integration groups to design, develop, and launch new products and next-generation platforms.

Qualifications

• Master's or PhD in Electrical Engineering or closely related field with a strong background in power device physics, including VDMOS, trench DMOS, and SGT device.
• Good knowledge of semiconductor processes such as diffusion, implantation, and etching.
• Ability to work in a team environment and participate in multi-discipline development projects.
• Hands-on experience with laboratory equipment and characterization of semiconductors and their applications.
• Knowledge of basic power conversion topologies, such as DC/DC, Flyback, PFC, and LLC topologies.
• Proven ability to collaborate with the other engineering groups to design & development new projects.

Benefits

• Vacation/PTO
• Medical/Dental/Vision
• 401k w/ match
• Bonus plan
• ESPP
• Relocation