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RF Technology Development Engineer - SMTS

essex junction, vt • Posted 6 days ago
Onsite Full Time General

Device And Integration EngineerThis role is responsible for developing, optimizing, and qualifying FEOL and BEOL semiconductor devices and processes to meet performance, cost, and yield goals. The position leads design-of-experiments (DOE), drives root-cause problem solving, and collaborates closely with process, characterization, and failure analysis teams to improve device performance and manufacturing robustness.

The role also supports customer technical inquiries, establishes new design rules and test methodologies, and ensures all work is performed in compliance with Environmental, Health, Safety, and Security requirements.Essential ResponsibilitiesResponsible for development, optimization, and qualification of FEOL and BEOL semiconductor devices and processes to meet performance, cost and yield requirementsDOE design, execution, and analysis of results.Partner with unit process module engineers, failure analysis and characterization team to improve device performance and yieldOwn and drive technical process problem solving.Interact with internal & external customers and respond to technical queries.Establish new technology design rules, test structures and test methodologies.Innovate new methods of continuous process/device improvement.Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirementsOther Responsibilities:Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.Required Qualifications :Education: Master's Degree or PhD in Electrical, Materials Science, or other relevant engineering or physical science discipline. BS + 8-10 years of experience or MS +7 years or PhD + 5 yearsYears of Experience: 5+ years in semiconductor processingExperience in Silicon or SiGe BiCMOS FEOL or BEOL processing and/or semiconductor process developmentExperience with Cadence or any other layout and simulation toolStrong data analysis skillsFluency in English Language – written & verbalAbility to relocate to Essex Junction, VTPreferred Qualifications :8+ Years of Experience in Silicon or SiGe BiCMOS FEOL or BEOL processing and/or semiconductor process developmentExperience of leading a device or process development projectTCAD experienceExperience in RF device design and characterization including high frequency design, measurement and analysisExcellent interpersonal skills, energetic, motivated, and self-drivenDemonstrate ability to work well within a global matrixed team or environment with minimal supervisionOutstanding communication skills - both written and verbalDemonstrated ability to communicate well with all levels of the organization and experience in working with external constituenciesStrong organizational skills; demonstrated ability to manage multiple tasks simultaneously and able to react to shifting priorities to meet business needsDemonstrated ability to meet deadlines and commitmentsExpected Salary Range$118,000.00 - $210,000.00The exact Salary will be determined based on qualifications, experience and location.

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