CLAWS III-N Power Integration EngineerWe are seeking a highly skilled Wide-Bandgap Power Device Engineer to join our team and contribute to the development of next-generation power semiconductor devices. The ideal candidate will have expertise in semiconductor process integration, power device design (diodes, FETs, etc.), electrical characterization, and device simulation to drive innovation in high-efficiency, high-performance wide-bandgap power solutions.Key Responsibilities:Power Device Design & Development (30%)Process Integration & Fabrication (30%)Electrical Characterization & Reliability Testing (20%)Cross-functional Collaboration (20%)Other Responsibilities:Comply with stated workplace policies.Communicate results, plans, and other updates to a variety of audiences.Adhere to and mentor others in known best practices.Support CLAWS activities such as tours, meetings, and conferences.Qualifications:Minimum Education and Experience:Ph.D. or M.S. in Electrical Engineering, Materials Science, or a related field with a focus on power semiconductor devices. 3+ years of experience in GaN power device design and process integration (industry or research).Other Required Qualifications:A track record of publications in high-quality journals and/or conferences.
Experience characterizing high-power semiconductor devices and extracting relevant device parameters. Excellent communication and interpersonal skills. Ability to multitask and meet deadlines with moderate supervision. Ability to follow safe procedures for working with semiconductor fabrication equipment, chemicals, and compressed gas cylinders. Comfort in collaborating with students, faculty, and staff of varying experience and backgrounds. Strong background in semiconductor physics, TCAD simulation, and electrical characterization. Hands-on experience with semiconductor process integration, fabrication, and failure analysis. Familiarity with GaN E-mode, D-mode, lateral vs. vertical device structures, and reliability challenges. Eligibility to obtain clearance upon request of the US government.Preferred Qualifications:The successful candidate would preferably have additional experience in:TCAD device modeling.Additional characterization of materials and devices, including failure analysis, defect inspection, radiation effects, and high-k dielectrics.Fabrication of semiconductor devices for high-power applications.Lithography mask layout.MES and SPC systems.Statistical methods (e.g., DOE, GR&R) and tools (e.g., JMP, Minitab).Power electronics applications (high-voltage converters, automotive, RF, or data centers).Packaging constraints and thermal management for GaN devices.